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功率MOS

產(chǎn)品展示MOSFET功率MOS

NCE2333Y

NCE2333Y

Description The NCE2333Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -6A RDS(ON) < 45m?(max) @ VGS=-2.5V RDS(ON) < 30m?(max) @ VGS=-4.5V ● High power and current handing capability ● Lead free product is

Description The NCE2333Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -6A RDS(ON) < 45m?(max) @ VGS=-2.5V RDS(ON) < 30m?(max) @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management

NCE12P09S

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